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2D semiconductor aims to turbocharge development of high-performance electronics

Nature作者：Taoyu Zou2026年9月30日正文已收录本站
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An ultrathin semiconductor that conducts electricity using positively charged ‘holes’ might clear the way for next-generation electronic devices.

By

  1. Taoyu Zou

    1. Taoyu Zou is in the Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, South Korea.

  2. Yong-Young Noh

    1. Yong-Young Noh is in the Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, South Korea.

Electric currents in semiconductors arise from the movement of either negatively charged electrons or positive charge carriers known as holes. Research into atomically thin semiconductors has yielded remarkable 2D materials that efficiently transport electrons. However, identifying counterpart materials that efficiently transport holes has been much more challenging. The lack of such materials has been a considerable obstacle to the implementation of complementary 2D electronics — in which devices that use electron-transporting (n-type) 2D semiconductors are paired with equivalent devices that use hole-transporting (p-type) 2D semiconductors to improve overall performance and power efficiency. Writing in Nature, Tseng et al.1 report a semiconductor known as boron carbon nitride (BCN) that potentially fills this gap.

doi: https://doi.org/10.1038/d41586-026-02777-x

References

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Competing Interests

The authors declare no competing interests.

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